| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688711 | Vacuum | 2012 | 4 Pages |
Abstract
⺠Work function of the Ni gate electrode on SiO2 and HfO2 dielectrics. ⺠Dielectric constants of HfO2 and Al2O3 thin layers. ⺠Thin SiO2 interfacial layer at HfO2/Si and Al2O3/Si interfaces. ⺠Ni as a promising gate electrode for high-k technology, particularly for HfO2 oxides.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Benko, A. Vincze, L. Harmatha, I. Novotný, V. ÅeháÄek,