Kinetic modeling of laser annealing processes in a-C:H films

In this research work, a nanosecond-pulsed YAG:Nd laser was used to modify the properties of an amorphous hydrogenated carbon film, which was deposited on c–Si substrate. Experimental examination has revealed that the primary effect of irradiation is diamond-to-graphite transformation or, more specifically, carbon sp3-to-sp2 hybridization transition. These findings were qualitatively verified by numerical simulation of kinetic processes that proceed in the film under laser irradiation.

► sp3 content depends on H adsorption on carbon dangling bonds and graphitization. ► New kinetic model of the laser annealing of a-C:H films was developed. ► SiC formation occurs mainly in a-C:H/Si interface, and it contribution is minor. ► Increasing laser intensity accelerates graphitization and increase in SiC content.