| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688820 | Vacuum | 2011 | 5 Pages |
Abstract
⺠Nanocrystalline Si:H films were prepared by PECVD technique. ⺠Intrinsic compressive film stress was revealed by Raman and curvature radius skill. ⺠Raman signals were well fitted by a model of strain-calibrated phonon confinement. ⺠The compressive stress shows intensive correlation to material structures. ⺠It is noted one should evaluate carefully nanomaterial's stress with Raman method.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Wensheng Wei, Jianling Su, Congliang Zhang, Liang Chu, Tianmin Wang,