| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688876 | Vacuum | 2012 | 4 Pages |
In this work, we investigated the effects of methane concentration and gas flow rate ratio between hydrogen and methane on the quality of graphene synthesized by chemical vapor deposition. It is found that a critical concentration of methane is needed to grow continuous graphene films, while discontinuous graphene flakes are formed at low methane concentrations. Under the condition without hydrogen, a graphene film in which monolayer areas are predominant is grown, whereas a great proportion of hydrogen causes thick graphene, which reduces the transmittance of the film. Our results present an instructive reference to the large-area synthesis of graphene for the potential applications in electronics.
► High enough methane concentration is needed for growing continuous CVD graphene. ► Hydrogen during CVD does not induce significant defects in graphene. ► Higher hydrogen concentration in CVD, thicker graphene films are formed.
