Article ID Journal Published Year Pages File Type
1688911 Vacuum 2012 4 Pages PDF
Abstract
► Epitaxy cubic Zn0.7Mg0.3O film is achieved by pulsed-laser deposition. ► The substrate is Si(100), then TiN thin film is employed as a buffer layer. ► The cubic Zn0.7Mg0.3O film has good structural qualities and is transparent. ► The relative dielectric constant (ɛr) of cubic Zn0.7Mg0.3O capacitance is 8.1.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Preview
Epitaxial growth and properties of cubic Zn0.7Mg0.3O films on TiN-buffered Si(100) substrates by in situ pulsed laser deposition
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