| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1688934 | Vacuum | 2012 | 7 Pages |
Abstract
⺠We have grown erbium films on single crystal Si at different deposition conditions. ⺠The microstructures of erbium films on Si are susceptible to substrate temperature. ⺠The triangular pinholes appear on film surface at temperature higher than 350 °C. ⺠The shape of pinhole is conforming to geometry of the underlying Si(111) substrate. ⺠The deposition time can affect the reaction of erbium film and Silicon substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
H.H. Shen, S.M. Peng, X.G. Long, X.S. Zhou, J.H. Liu, K. Sun, L. Yang, Q.Q. Sun, X.T. Zu,