Article ID Journal Published Year Pages File Type
1688992 Vacuum 2011 6 Pages PDF
Abstract
► In this study, HfAlO3 thin films were etched in a BCl3/Ar plasma. ► The etching characteristics of the HfAlO3 thin films were investigated in various conditions. ► A maximum etch rate of 52.6 nm/min was achieved in the 30 % BCl3/(BCl3+Ar) plasma. ► The etched HfAlO3 thin films were investigated using X-ray photoelectron spectroscopy (XPS).
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Preview
Dry etching characteristics of HfAlO3 thin films in BCl3/Ar plasma using inductively coupled plasma system
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