Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1689016 | Vacuum | 2010 | 4 Pages |
Abstract
ZnO thin films were prepared on glass or on homo-buffer/glass by a RF magnetron sputtering method at RF power of 100-550Â W. The structural and Raman characteristics of the films were analyzed by X-ray diffraction and Raman scattering. There appeared a sharp peak of 1080.2Â cmâ1 near the A1(2LO) mode (1156Â cmâ1) of ZnO in the Raman spectra when the RF power was higher than 300Â W. In this case, the (100) peak of ZnO film appeared obviously. It was speculated that the Raman mode at 1080.2Â cmâ1 was induced by the ordered distribution of Zni defects in ZnO lattice.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Qiong Xu, Xingwen Zhu, Fang Zhang, Longxing Yang, Wenzhong Jiang, Xiao Zhou,