| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1689046 | Vacuum | 2011 | 4 Pages |
A novel method was utilized to synthesize one-dimensional β-Ga2O3 nanostructures. In this method, β-Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia in a quartz tube. The as-obtained samples were analyzed in detail using the methods of X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDX) attached to the HRTEM instrument. The results show that the formed nanostructures are single-crystalline Ga2O3. The annealing temperature has an evident influence on the morphology of the β-Ga2O3 nanostructures. The growth mechanism of the β-Ga2O3 nanostructures is also discussed by conventional vapor–solid (VS) mechanism.
Research highlights► β-Ga2O3 nanostructures were synthesized through annealing sputtered Ga2O3/Mo films. ► The as-obtained samples are single-crystalline. ► The annealing temperature has an evident influence on the morphology. ► The formation of the Ga2O3 nanostructures is described by vapor-solid mechanism.
