Influence of the deposition pressure on the preparation of μc-Si:H thin films in hot-wire-assisted MWECR-CVD system

Considering the important influence of the deposition pressure on the growth of thin films, such as deposition rate, crystalline volume fraction and density, etc., and based on the analysis of the advantages and disadvantages on the mono-pressure method, we proposed a new method of high- and low-pressure combination to prepare hydrogenated microcrystalline silicon (μc-Si:H) films, i.e. at first we used high pressure to deposit film in 2 min in order to minish the thickness of incubation layer from the amorphous phase transition to crystalline phase, and then used low pressure to deposit film in 18 min to improve the density and decrease the oxidation of the film. The experimental results showed that using this new method the thin film with high crystalline volume fraction of 61% and low light-induced degradation ratio of 5.6% at 210 min was obtained, and meanwhile, it also possessed higher density and better photoelectronic properties than mono-pressure method.