| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1689281 | Vacuum | 2010 | 4 Pages |
Abstract
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by “electroless” deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Galván-Arellano, J. Díaz-Reyes, R. Peña-Sierra,