Investigation of indium diffusion process in In+ ion implanted GaAs

Rutherford backscattering (RBS) has been used to determine diffusion coefficients of indium atoms in semi-insulating (1 0 0) GaAs implanted with 250 keV In+ ions at a fluence of 3×1016 cm−2 and isobarically annealed at 600 and 800 °C temperature. Computer modeling of the indium depth profiles based on Ga vacancy-mediated diffusion has shown good agreement with the RBS experimental results. Self-annealing effect was confirmed to play an important role due to high defect mobility at room temperature ion implantation. Large values of the In diffusion coefficients obtained in the present study, in comparison with the literature data for unimplanted GaAs, confirms strong enhancement of the diffusion process by radiation damage.