| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1689299 | Vacuum | 2007 | 4 Pages |
Abstract
Experimental results on frequency and temperature dependences of conductivity of GaAs layers compensated by polyenergetic H+ implantation are presented. A model of hopping conductivity related to amphoteric defects is proposed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, F.F. Komarov, A.M. Mironov, N. Butkievith, D. Freik,