| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1689404 | Vacuum | 2009 | 4 Pages |
The design, fabrication and test of piezoresistive sensors based on nanocrystalline diamond (NCD) films are reported. The CoventorWare FEM calculations of the mechanical stress and geometrical deformations of a 3-D structure are used for a proper localization of the piezoresistor on the carrying substrate. The boron-doped piezoresistive sensing element was realized using a directed patterned growth of NCD film on SiO2/Si by microwave plasma-enhanced chemical vapour deposition (CVD). The gauge factor of boron-doped NCD films was investigated in the range from room temperature up to 200 °C and from 0 to 5 N of the applied force. These NCD piezoresistive sensor elements are compared with a Silicon-on-Insulator (SOI) based piezoresistive sensor and their high-temperature applications are discussed.
