| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1689436 | Vacuum | 2009 | 4 Pages |
Abstract
We have studied thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO3 and GdScO3 thin dielectric films by SIMS and capacitance–voltage (C–V) measurements. In both GdScO3 and LaLuO3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C–V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO3 and LaLuO3 films, respectively. Furthermore we have observed that LaLuO3 films exhibit C–V characteristics more stable to annealing conditions compared with GdScO3 films.
Related Topics
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Authors
A. Vincze, R. Lupták, K. Hušeková, E. Dobročka, K. Fröhlich,