Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1689477 | Vacuum | 2007 | 4 Pages |
Abstract
Thermal donors formation in silicon implanted with H2+ or He+ ions or co-implanted with both kinds of ions and annealed at 720Â K under atmospheric and enhanced pressure was studied. Interaction between defects from different implanted layers was also analysed. Local strain in implanted layers was found to determine the process of defect and impurity redistribution.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Wojciech Jung, Irina V. Antonova, Andrzej Misiuk,