Study of defects in the near-surface layer created in silicon by H2+ or He+ implantation

Thermal donors formation in silicon implanted with H2+ or He+ ions or co-implanted with both kinds of ions and annealed at 720 K under atmospheric and enhanced pressure was studied. Interaction between defects from different implanted layers was also analysed. Local strain in implanted layers was found to determine the process of defect and impurity redistribution.