A simple implement of submicron meter RRAM array based on porous SiO2 film with uniform and large pores

•Nano-template casting was used to fabricate small scale resistive switching (RS) array.•Porous SiO2 template with large and uniform pores was fabricated with the assistance of NH4F.•Plasma oxidation is used to grow TiO2 RS layer under high pristine vacuum condition.•Individual RS cells with diameter of 400 nm are obtained with good and stable RS behavior.•Cells are capable for low power consumption application, owing to the 10 nA writing current.

Resistive Random Access Memory (RRAM) array is considered as a promising trend for future memory devices. At present, the integration of RRAM array into CMOS circuit is limited by the density and scale of the memory element. In this paper, a new way to fabricate RRAM array with submicron meter range element size is proposed. Porous SiO2 film with large and uniform through-holes is prepared as nano-template for device fabrication. Plasma oxidation is utilized to grow 100 nm titanium oxide resistive switching (RS) layer. Discrete circular RS cells with diameter of 400 nm are obtained, with a vertical structure of AgTiO2TiPtTiSi, from top to bottom. Good and uniform RS properties are acquired by conductive Atomic Force Microscope (cAFM).