Article ID Journal Published Year Pages File Type
1689605 Vacuum 2009 5 Pages PDF
Abstract

Hydrogenated amorphous carbon nitride (a-CNx:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) in CH4–NH3 system. The chemical composition and bonding configuration were investigated by XPS and FTIR. The results indicated that both sp2CN and sp3CN bonds generally increased with the increase of the nitrogen concentration, and the N atoms bonded to C atoms through CN, CN and CN bonds. Remarkably, for FTIR spectra, two peaks (2125 and 2200 cm−1) were obviously observed, corresponding to CN bond which was found to predominantly exist in the isonitrile structure. As more nitrogen atoms were incorporated, the optical band gap was found to vary from 1.8 to 2.5 eV. Finally, the conduction mechanisms were discussed at low and high temperature, respectively.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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