Rotatable serial co-sputtering of doped titania

Due to the independent power control of the secondary target the tungsten and niobium concentration can easily be optimized. We present doping series for optimizing either the SYA effect for TiO2:W or the effect of a transparent conductive TCO for TiO2:Nb. With tungsten doping we achieved an enhancement of more than twice the DC sputter rate. With niobium doping and a post-deposition annealing step (350 °C) we reach resistivity values of about 1.2 × 10−3 Ωcm.