Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1689773 | Vacuum | 2007 | 8 Pages |
We have successfully transferred heteroepitaxial Pb(Zr,Ti)O3 (PZT) thin films from MgO substrates on to glass substrates. The transferred PZT thin films exhibit single crystal structure with ferroelectric properties similar to the as-grown epitaxial films. The transferring process comprises coating of Cr-metallized surface of epitaxial PZT thin films, pressing and cementing the Cr-metallized surface on to the glass substrates by silicone rubber, and removing the MgO substrates by chemical etching. This process realizes a fabrication of high-temperature processed PZT thin films onto the glass at room temperature. The process is also available for the transformation of PZT thin films on organic film sheet. The present transfer process reduces the effects of the inevitable strain and/or constraint to rigid substrates for heteroepitaxial growth and has a potential for integration of single crystal piezoelectric PZT devices onto a wide variety of MEMS.