Morphological, structural and optical properties of thin SiC layer growth onto silicon by pulsed laser deposition

Crystalline silicon carbide thin layers were grown on a p-type Si(1 0 0) substrate by pulsed laser deposition (PLD) using KrF excimer laser at λ=248 nm from a 6H–SiC hot-pressed target. The target “SiC” used to elaborate our SiC films is realized from a mixture of 1SiO2 with 3C (carbon) “1SiO2+3C” heated in an oven at 2500 °C (the target was a hot-pressed material and supplied by Goodfellow). The morphological, structural and optical properties of SiC layers were investigated by scanning electronic microscopy (SEM), high-resolution X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and UV–visible spectrophotometer. XRD analysis of the target showed that this latter is a hexagonal structure (6H–SiC). The XRD pattern shows that a 1.6 μm crystalline SiC layer was formed. In addition, a SIMS analysis gives a ratio Si/C of the thin SiC layer around 1.15 but the ratio Si/C of the target was found equal to 1.06, whereas one should have 1.0. This is due to the degree of the sensitivity of the SIMS technique and due to the higher ionization efficiency of Si compared to C atoms, all these which give different ratios. It is known that the PLD technique reproduces the same macroscopic property (optical, mechanical, structural, etc.) of the target. An optical gap (EGap) of the SiC layer of about 2.51 eV was obtained by reflectance measurement. Finally, a crystalline thin SiC layer of 1.6 μm was elaborated using PLD method at low-temperature deposition.