Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1689783 | Vacuum | 2007 | 8 Pages |
Thin films of MoO3 were prepared on quartz and Si (1 0 0) substrates by reactive dc magnetron sputtering of a Mo target in an oxygen and argon atmosphere. The structural and optical changes induced in the films due to post-growth annealing have been systematically studied by Rutherford backscattering (RBS), X-ray diffraction (XRD), X-ray reflectivity (XRR) and by optical methods. RBS studies reveal no change in composition of the films upon annealing at high temperatures. Grazing angle XRD studies show that the as-deposited films are amorphous and crystallize to β-MoO3 phase with small contribution of α-MoO3 upon annealing at 300 °C. The film prepared at 0.40 Pa transforms to α-MoO3 upon annealing at 650 °C, while the film deposited at 0.19 Pa still has some β-MoO3 phase contribution. XRR measurements reveal that the film thickness decreases upon annealing with simultaneous increase of film density. The surface roughness of the films strongly increases after crystallization. The contraction of the film deposited at 0.40 Pa is much greater than the contraction of the film prepared at 0.19 Pa. The mass variation of the film deposited at 0.19 Pa and that deposited at 0.40 Pa are completely different. The optical properties of MoO3 films deposited at 0.19 and 0.40 Pa are changed strongly by annealing.