Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1689899 | Vacuum | 2015 | 4 Pages |
Abstract
In this work, tantalum nitride (TaN) was chosen as the wet etch stop layer (WESL) for its application in the 22Â nm and beyond nodes CMOS technology. TaN WESL prevents the attacking of titanium nitride (TiN)/hafnium dioxide (HfO2) stack covering n-channel MOS (nMOS) regions from selectively stripping work function metals of p-channel MOS (pMOS) gate, i.e. TiN & titanium (Ti), by ammonia hydrogen peroxide mixture (APM) solution. In terms of etching selectivity to TiN & Ti, gate filling capability and work function tuning for both nMOS and pMOS, the properties of TaN films prepared by different methods such as physical vapor deposition (PVD) and atomic layer deposition (ALD) were investigated systematically.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hushan Cui, Jun Luo, Jing Xu, Jianfeng Gao, Jinjuan Xiang, Zhaoyun Tang, Xiaolei Wang, Yihong Lu, Xiaobin He, Tingting Li, Bo Tang, Jiahan Yu, Tao Yang, Jiang Yan, Junfeng Li, Chao Zhao, Tianchun Ye,