Electrical characterization of Si(100) surface at p-Si/SiGe/Si structure using low temperature Hall measurement analysis

The pinning position of Fermi level and surface charge density at Si(100) surface of epitaxially grown p-Si/SiGe/Si structure has been evaluated via low temperature Hall experiment analysis. It is explained how the density of two-dimensional hole gas (2DHG) formed in the SiGe quantum well is affected by structural parameters, and proximity of Si surface charges and 2DHG. This approach is based on static charge transfer and Mid-gap Pinning Model (MPM). Finally, the passivation of Si surface by diluted HF etchant has been discussed.

► Inverted remote doped p-Si/SiGe/Si structure used for electrical characterization of Si surface. ► Density of two-dimensional hole gas in SiGe quantum well is a measure of surface characterization. ► Hole gas density decreases as Si cap film is thinned via wet etching. ► Surface charges and Fermi level evaluated via Hall experiment analysis in Mid-gap Pining Model. ► Fermi level pining position lies at 0.75 ± 0.15 eV above the bulk valance band.