| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690179 | Vacuum | 2015 | 5 Pages |
Abstract
In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950 °C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Chyuan Haur Kao, Hsiang Chen, Su Zhien Chen, Sheng-Hao Hung, Chian You Chen, Yun-Yang He, Shang-Ren Lin, Kun-Min Hsieh, Min-Han Lin,