Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690185 | Vacuum | 2015 | 4 Pages |
Abstract
The study explored titanium dioxide (TiO2) prepared by liquid phase deposition (LPD) deposited on (NH4)2Sx-treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83Â ÃÂ 10â7Â A/cm2 at zero electric field for the sample without any pretreatment. The interface trap density (Dit) and the flat-band voltage shift (ÎVFB) are 4.46Â ÃÂ 1012Â cmâ2Â eVâ1 and 3.6Â V, respectively. After the 10Â min 5% (NH4)2Sx pretreatment, the leakage current density, Dit, and ÎVFB can be improved to 1.04Â ÃÂ 10â7Â A/cm2 at zero electric field, 2.28Â ÃÂ 1012Â cmâ2Â eVâ1, and 2Â V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO2 after 10Â min sulfide pretreatment.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jung-Sheng Huang, Tai-Lung Lee, Yong-Jie Zou, Kuan-Wei Lee, Yeong-Her Wang,