Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690360 | Vacuum | 2013 | 4 Pages |
Copper nitride films were deposited on glass substrates by reactive DC magnetron sputtering at 100 °C substrate temperature. The influence of N2-gas flow rates on the structure, resistivity and microhardness of deposited films was investigated. X-ray diffraction measurements showed that the films were composed of Cu3N crystallites with anti-ReO3 structure and exhibited preferential orientation to the [111] and [100]. The preferred crystalline orientation of the films changed with the N2-gas flow rate, which should caused by the variation of Cu nitrification rate with N2-gas flow rate. Additionally, the N2-gas flow rate also affected the deposition rate, the resistivity and the microhardness of the Cu3N films. The optimum N2-gas flow rate for producing high-quality and well-oriented Cu3N films on glass substrates is 5–10 sccm, where the substrate temperature is 100 °C and the DC power is 50 W.