| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690368 | Vacuum | 2013 | 5 Pages |
Abstract
Silicon samples were implanted with up to 6E+16 cm−2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm−2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segregated towards the surface and occupying non-substitutional positions. SQUID magnetization measurements show the formation of paramagnetic phase of concentration increasing with the applied manganese fluence.
► Silicon samples were implanted with manganese and annealed by plasma pulses. ► They show good crystallinity, and non-substitutional location of manganese atoms. ► The presence of paramagnetic phase growing with the implant fluence is revealed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Z. Werner, C. Pochrybniak, M. Barlak, J. Gosk, J. Szczytko, A. Twardowski, A. Siwek,