Article ID Journal Published Year Pages File Type
1690456 Vacuum 2007 4 Pages PDF
Abstract
In this paper, we report on a novel Nb-Ti/Al/Ni/Au metallic system proposed to form ohmic contact to AlGaN/GaN heterostructure. The metallic system uses deposition of thin niobium layer as the first layer in contact with the AlGaN barrier layer before deposition of the conventional Ti/Al/Ni/Au metallic system. The fabrication and electrical characterization of the Nb-Ti/Al/Ni/Au based ohmic contacts are presented. We have shown that Nb-based ohmic contacts at optimal alloying temperatures seem to be superior to that of conventional Ti/Al/Ni/Au in both surface morphology and contact resistivity evaluation. Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) are also used to evaluate the improved ohmic contact formation.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
Authors
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