| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690530 | Vacuum | 2012 | 4 Pages |
Abstract
⺠We report a method to improve the electrical properties of lanthanum gate oxide. ⺠Incorporation of aluminum atoms into the oxide results in forming complex oxide. ⺠We found that a thin Al2O3 was formed at the Si/La2O3 interface. ⺠The Al2O3 layer suppresses the formation of silicates and silicide bonds. ⺠Significant reductions on the bulk and interface trap densities were found.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hei Wong, B.L. Yang, K. Kakushima, P. Ahmet, H. Iwai,