| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690545 | Vacuum | 2012 | 5 Pages |
Abstract
⺠β-FeSi2 films were fabricated on silicon (100) substrates by PLD and post-annealing. ⺠XRD intensity reached a threshold and then decreased as annealing time increased. ⺠SEM revealed a smooth surface after 9 h annealing. ⺠Optimal photoluminescence was obtained after 9 h annealing process. ⺠PL properties were associated with the crystalline quality and surface morphologies.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
S.C. Xu, S.B. Gao, B.Y. Man, C. Yang, M. Liu, Y.Y. Ma, S.Z. Jiang, C.S. Chen, A.H. Liu, X.G. Gao, Z.C. Sun, B. Hu, C.C. Wang,