Diluting and annealing effects on electromigration and morphology of chemical vapor-deposited copper films

The crystallization and orientation of chemical vapor-deposited copper films were investigated by means of X-ray diffraction. The ratios of Cu (1 1 1) peak intensity to Cu (2 0 0) [I(1 1 1)/I(2 0 0)] of the film deposited at different temperatures were plotted as a function of temperature. Then it can be found that the ratio of I(1 1 1)/I(2 0 0) increased with the deposition temperature, and 400 °C is the best one for electromigration when the films are grown in diluting N2, and/or annealing by N2 or by H2. In addition, the morphology of copper films was characterized by atomic force microscopy, and it was found that the smoothness of the films grown in diluting N2 and/or annealing by N2 are improved, while the films annealing by H2 have no significant changes.