| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690618 | Vacuum | 2012 | 5 Pages |
Abstract
⺠High deposition rate silicon carbide thin films were prepared by hot wire CVD technique. ⺠High intensity Si-C stretching bonds were observed in the films. ⺠Multiphase SiC thin film was grown at higher methane flow rate. ⺠Nano-crystalline SiC formed at low methane and silane flow rates without using hydrogen. ⺠The Methane flow rate was an important parameter to control the structural properties of the film.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
F. Shariatmadar Tehrani, M.R. Badaruddin, R.G. Rahbari, M.R. Muhamad, S.A. Rahman,