Optimization of n+ nc-Si:H and a-SiNx:H layers for their application in nc-Si:H TFT

► The resistivity values of n+ nc-Si:H films increase by more than 7 orders of magnitude when the film thickness decreases below a critical value (∼45 nm). ► There is an optimum RF power density for the deposition of n+ nc-Si:H films to minimize the film resistivity, i.e. to decrease the contact resistance in nc-Si:H based thin film transistor. ► NH3/SiH4 flow ratio used during the growth of a-SiNx:H layer (or N-H/Si-H ratio within the film) affects the threshold voltage of nc-Si:H based thin film transistor.