Article ID Journal Published Year Pages File Type
1690788 Vacuum 2006 5 Pages PDF
Abstract

AZO (ZnO:Al) transparent conductive thin film was prepared by RF magnetron sputtering with a AZO (98 wt% ZnO 2 wt% Al2O3) ceramic target in the same Ar+H2 ambient at different substrate temperatures ranging from 100 to 300 °C. The minimum resistivity of AZO films was 7.9×10−4 Ω cm at the substrate temperature of 200 °C. The average transmission in the visible rang was more than 90%. Scanning electron microscopy and XRD analyses showed that the surface morphology of the AZO samples altered with the increasing of the substrate temperature. AZO film prepared at 200 °C in the pure Ar ambient was also made as comparison about the resistivity, carrier concentration and the average crystallite size. The resistivity became about 3 times higher. The carrier concentration became lower and the average crystallite size was smaller.

Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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