Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690799 | Vacuum | 2006 | 4 Pages |
Abstract
GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented α-GaN. Photoluminescence studies show that the emission from cubic β-GaN inclusions dominates the spectrum.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
O. Maksimov, Y. Gong, H. Du, P. Fisher, M. Skowronski, I.L. Kuskovsky, V.D. Heydemann,