| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690820 | Vacuum | 2011 | 5 Pages |
Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO2 buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO2 buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO2 buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias.
► A SiO2 buffer layer is inserted between the ITO/Cu/ITO film and PET substrate. ► The effect of SiO2 layer thickness on properties of ITO/Cu/ITO films is studied. ► The proper SiO2 layer thickness lowers the sheet resistance of ITO/Cu/ITO films. ► A SiO2 buffer layer has little effect on optical transmittance of ITO/Cu/ITO films. ► The 40 nm SiO2 buffer layer reveals a better figure of merits of ITO/Cu/ITO films.
