| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1690894 | Vacuum | 2011 | 4 Pages |
Piezoelectric c-textured Al(1−x)ScxN thin films, where the Sc relative concentration, x, varies in the range 0–0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al(1−x)ScxN based FBARs for wide band RF applications.
► Thin film bulk acoustic resonators (FBAR) employing highly c-textured Al(1−x)ScxN thin films are found promising for radio frequency (RF) band applications. ► Electromechanical coupling increases by factor of two for relative Sc concentration up to 20%. ► Resonator figure of merit exhibit a maximum at relative Sc concentration of 9%. ► Accordingly wide bandwidth RF filters with low losses and steep skirts can be build using this technology.
