Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690919 | Vacuum | 2010 | 8 Pages |
Abstract
Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) films were grown in an asymmetric rf PECVD system using C2H2 and N2 gaseous mixture. Deposition rate, stress, hardness, optical bandgap, refractive index, and electrical characteristics have been studied as a function of self bias. Microstructures of these films were also studied using LASER Raman technique. Finally nitrogen diluted a-C:H films were realized as n-type semiconductor in n-type a-C:H/p-type crystalline silicon hetrojunction diodes. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics have also been studied as a function of self bias on these heterojunction diodes.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Sushil Kumar, Neeraj Dwivedi, C.M.S. Rauthan, O.S. Panwar,