Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1690997 | Vacuum | 2011 | 5 Pages |
Abstract
In this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B2H6) was a doping agent, and the flow ratio η of B2H6 component to silane (SiH4) was varied in the experimental. Films' surface morphology was investigated with atomic force microscopy (AFM); Raman spectroscopy, X-ray diffraction (XRD) was performed to study the crystalline volume fraction Xc and crystalline size d in films. The electrical and optical properties were gained by Keithly 617 programmable electrometer and ultraviolet-visible (UV-vis) transmission spectra, respectively. It was found that: there are on the film surface many faulty grains, which formed spike-like clusters; increasing the flow ratio η, crystalline volume fraction Xc decreased from 40.4% to 32.0% and crystalline size d decreased from 4.7 to 2.7 nm; the optical band gap Egopt increased from 2.16 to 2.4 eV. The electrical properties of p-type nc-Si:H films are affected by annealing treatment and the reaction pressure.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Liqiang Guo, Jianning Ding, Jichang Yang, Zhiyong Ling, Guanggui Cheng, Ningyi Yuan, Shubo Wang,