| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691002 | Vacuum | 2011 | 5 Pages |
Abstract
⺠Changes in the temperature of SiC film were measured in the process of film growth. ⺠Uncontrolled temperature deviations at the film growth were observed. ⺠Sizes of temperature variations depend on the energy and current density of the ions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.V. Semenov, V.M. Puzikov,