Article ID Journal Published Year Pages File Type
1691195 Vacuum 2008 5 Pages PDF
Abstract
A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Nb films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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