Phase formation, chemical composition and electrical studies of Ti/Si bilayer system

The annealing effects over a range of temperatures of the titanium film (90 nm) grown on Si(111) by electron gun evaporation technique were investigated using physical and electrical measurements. Grazing Incidence X-ray Diffraction experiment shows a stable titanium disilicides formation at higher annealing temperature. The depth profiling data using X-ray Photoelectron Spectroscopy show that the properties are closely related to the change of the interfacial layer and chemical state under the high-temperature annealing. The Schottky Barrier Height, as estimated by the current–voltage measurement is 0.75, 0.695, 0.662 and 0.60 eV for pristine and annealed samples at 450, 550 and 700 °C respectively.