Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691296 | Vacuum | 2008 | 4 Pages |
Abstract
Al-doped ZnO films were prepared by the dc magnetron sputtering technique on Suprasil-1 substrates at a temperature of 470Â K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of substrate position during deposition on the structural, electrical and optical properties of the films was investigated. It was found that preparation of low-resistance films with high optical transmission over the visible region is possible under condition of low plasma effects on the growing film.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Halina Czternastek,