Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691335 | Vacuum | 2009 | 4 Pages |
Abstract
In an effort to increase the crystalline fraction of silicon films directly deposited on a glass substrate by hot-wire chemical vapor deposition, the effect of HCl addition was studied. The silicon film was deposited on a glass substrate at 320 °C under a reactor pressure of 1333 Pa at the wire temperature of 1600 °C with 10%SiH4-90%He at a fixed flow rate 100 standard cubic centimeter per minute (sccm) and HCl varied at 0, 10, 16 and 28 sccm. With increasing HCl, the crystalline fraction of silicon was increased as revealed by Raman spectra but the growth rate was decreased.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Yung-Bin Chung, Dong-Kwon Lee, Chan-Soo Kim, Nong-Moon Hwang,