Growth condition dependence of structural and electrical properties of Mg2Si layers grown on silicon substrates

Mg2Si layers were grown on Si substrates by thermal treatment of the substrates in a Mg vapor, and the growth condition dependence of the structural and electrical properties of the layers was investigated. The layers were grown by an interdiffusion process between the deposited Mg atoms and the substrates. The structural and electrical properties of the layers depend on the combinations of the Si substrate and Mg source temperatures during the heat treatment. Any deviation from the isothermal treatment conditions causes degradation of the structural and/or electrical properties of the Mg2Si layers. It was confirmed that the layers with the optimum structural and electrical properties were obtained when the layers were grown under isothermal growth conditions.