Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691438 | Vacuum | 2008 | 4 Pages |
Abstract
The behavior of electromigration-induced stress in Al-1.0% Si-0.5% Cu alloy interconnections was investigated in situ by synchrotron radiation at the SPring-8. The electromigration tests were performed as a function of applied current density. When the current was applied to the lines, 111 diffraction peak shifted to lower angle for all measurement points. This indicated that compressive stresses were present at all measurement positions in the lines. When the applied current was stopped, 111 diffraction peak reverted to its initial position for all measurement points. At constant current density, the position of 111 diffraction peak didn't change for any of the measurement positions.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Kazuya Kusaka, Takao Hanabusa, Shoso Shingubara, Tatsuya Matsue, Osami Sakata,