APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures

Unusual properties of the diluted nitrides AIIIBV-N make them very attractive in the point of view of fundamental investigations and practical applications. This work presents the growth characteristics and properties of the undoped GaAs1−xNx/GaAs heterostructures obtained by the atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The properties of the heterostructures were examined using high-resolution X-ray diffraction (HRXRD), photoreflectance spectroscopy (PR), photoluminescence (PL), photovoltage spectroscopy (PVS) and mercury probe C-V set-up with an HP 4192A impedance analyser (5 Hz-13 MHz). The maximum nitrogen content in GaAs1−xNx epilayers, determined from PR spectra, did not exceed 1.74%. The influence of the growth temperature (Tg) and the nitrogen source concentration in gas phase (Xg) on the properties of the GaAs1−xNx/GaAs heterostructures is presented and discussed.