Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691482 | Vacuum | 2007 | 4 Pages |
Abstract
CdS thin films grown on ITO/glass substrates by using chemical bath (CB) were boron-implanted employing 100 keV beam of boron ions (B+) with fluences in the range 1.0×1015–1.0×1016 ions/cm2. The B doping was successfully carried out, as was proved by the major carrier density introduced in the range 0.8×1018–5.4×1018 cm−3, which was calculated from thermo power measurements. Raman spectroscopy results support the assumption that triply ionized boron (B3+) enters into the CdS lattice occupying Cd2+ sites, which create shallow donor levels in the forbidden energy band gap.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
K.L. Narayanan, M. Yamaguchi, J.A. Davila-Pintle, R. Lozada-Morales, O. Portillo-Moreno, O. Zelaya-Angel,