| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691537 | Vacuum | 2009 | 4 Pages |
Abstract
1D defects (nanotubes) normal to the sample surface with defect's length equal to the projected range of the implanted ions were formed in the Cz Si wafers following He+ implantation with subsequent vacuum annealing and plasma treatment. The surfaces of wafers contained a small density of defects.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.V. Frantskevich, A.M. Saad, N.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, M.I. Tarasik, A.M. Yanchenko, P. WÄgierek, P. Å»ukowski,